View 2SC461_450785.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

2SC460, 2SC461
Silicon NPN Epitaxial Planar
Application
* 2SC460 high frequency amplifier, mixer * 2SC461 VHF amplifier, mixer
Outline
TO-92 (2)
1. Emitter 2. Collector 3. Base 3 2 1
2SC460, 2SC461
Absolute Maximum Ratings (Ta = 25C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SC460 30 30 5 100 200 150 -55 to +150 2SC461 30 30 5 100 200 150 -55 to +150 Unit V V V mA mW C C
2
2SC460, 2SC461
Electrical Characteristics (Ta = 25C)
2SC460 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO
1
2SC461 Max -- -- -- 0.5 0.5 0.75 200 1.1 -- 3.5 -- -- -- Min 30 30 5 -- -- -- 35 -- -- -- -- 13 -- Typ -- -- -- -- -- 0.63 -- 0.6 230 1.8 -- 17 -- Max -- -- -- 0.5 0.5 0.75 200 1.1 -- 3.5 -- -- -- V MHz pF dB dB dB Unit V V V A A V Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB = 18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA VCE = 12 V, IC = 2 mA I C = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IE = -1 mA f = 10.7 MHz VCE = 6 V, IE = -1 mA f = 100 MHz VCE = 6 V, IE = -1 mA f = 1MHz Rg = 500
Min 30 30 5 -- -- -- 35 -- -- -- 26 -- --
Typ -- -- -- -- -- 0.63 -- 0.6 230 1.8 29 -- 2.0
Base to emitter voltage VBE DC current transfer ratio hFE* Collector to emitter saturation voltage
VCE(sat)
Gain bandwidth product f T Collector output capacitance 10.7 MHz power gain 100 MHz power gain Noise figure Cob PG PG NF
Note: A
1. The 2SC460 and 2SC461 are grouped by h FE as follows. B 60 to 120 C 100 to 200
35 to 70
3
2SC460, 2SC461
Small Signal y Parameters (VCE = 6 V, IC = 1 mA, Emitter Common)
Item Input admittance Symbol f yie 455 kHz 4.5 MHz 2SC460A, 2S461A 0.58 + j0.074 0.65 + j0.79 2SC460B, 2SC461B 0.42 + j0.068 0.50 + j0.7 0.61 + j1.9 5.6 + j12 -j0.003 -j0.04 -j0.13 -j1.0 37 - j0.1 35 - j1.2 34 - j2.5 28 - j19 2SC460C, 2SC461C 0.30 + j0.051 0.35 + j0.57 0.39 + j1.3 3.8 + j6.0 -j0.003 -j0.04 -j0.13 -j1.0 37 - j0.2 34 - j1.8 33 - j4.5 20 - j19 0.016 + j0.012 0.03 + j0.10 0.12 + j0.4 0.83 + j2.0 mS mS mS Unit mS
10.7 MHz 0.91 + j2.0 100 MHz 7.4 + j14 Reverse transfer admittance yre 455 kHz 4.5 MHz -j0.003 -j0.04
10.7 MHz -j0.13 100 MHz -j1.0 Forward transfer admittance yfe 455 kHz 4.5 MHz 38 - j0.1 35 - j1.0
10.7 MHz 34 - j2.5 100 MHz 28 - j20 Output admittance yoe 455 kHz 4.5 MHz
0.0098 + j0.009 0.013 + j0.009 0.02 + j0.09 0.023 + j0.092 0.11 + j0.4 0.50 + j2.0
10.7 MHz 0.11 + j0.4 100 MHz 0.40 + j1.7
4
2SC460, 2SC461
Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 250 Collector Current IC (mA) 10 Typical Output Characteristics
100
80
200
8
150
6
60
100
4
40 20 A IB = 0
50
2
0
100 150 50 Ambient Temperature Ta (C)
0
4 8 12 16 20 Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics 10 Collector Current IC (mA) VCE = 6 V DC Current Transfer Ratio hFE 100
DC Current Transfer Ratio vs. Collector Current
8
80
6
60 VCE = 6 V
4
40
2
20
0
0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V)
0 0.1
3 10 0.3 1.0 Collector Current IC (mA)
30
5
2SC460, 2SC461
Noise Figure vs. Collector Current 5 VCE = 6 V Rg = 500 f = 1.0 MHz Noise Figure vs. Collector Current 24 20 Noise Figure NF (dB) 16 12 8 4 0 0.1 VCE = 6 V Rg = 50 f = 100 MHz
Noise Figure NF (dB)
4
3
2
1
0 0.2
0.5 1.0 2 5 Collector Current IC (mA)
10
0.2 0.5 1.0 2 5 Collector Current IC (mA)
10
Noise Figure vs. Signal Source Resistance 12 Gain Bandwidth Product fT (MHz) 10 Noise Figure NF (dB) 8 6 4 2 0 10 20 50 100 200 500 1000 Signal Source Resistance Rg () VCE = 6 V IC = 1 mA f = 100 MHz 500
Gain Bandwidth Product vs. Collector Current
400
VCE = 6 V
300
200
100
0 0.1
3 10 0.3 1.0 Collector Current IC (mA)
30
6
2SC460, 2SC461
Gain Bandwidth Product vs. Collector to Emitter Voltage Percentage of Relative to VCE = 6 V (%) 400 Gain Bandwidth Product fT (MHz) IC = 1 mA 300 500 boe goe gie goe bie boe IC = 1 mA f = 455 kHz Input/Output Admittance vs. Collector to Emitter Voltage
200
bie gie 100 50
200
100
20 10 1 10 20 50 2 5 Collector to Emitter Voltage VCE (V)
0 1 10 20 2 5 Collector to Emitter Volgage VCE (V)
Input/Output Admittance vs. Collector Current goe VCE = 6 V f = 455 kHz 200 bie 100 boe 50 bie gie 20 10 0.1 goe 0.2 0.5 1.0 2 Collector Current IC (mA) 5 boe gie Percentage of Relative to VCE = 6 V (%) Percentage of Relative to IE = 1 mA (%) 500 500
Transfer Admittance vs. Collector to Emitter Voltage IC = 1 mA f = 455 kHz 200 100 g fe 50 bfe bre gfe bfe bre
20 10 1 10 20 50 2 5 Collector to Emitter Voltage VCE (V)
7
2SC460, 2SC461
Transfer Admittance vs. Collector Current Percentage of Relative to IC = 1 mA (%) Percentage of Relative to VCE = 6 V (%) 500 VCE = 6 V f = 455 kHz 200 100 50 bre bfe 500 boe goe gie bie gie bie goe boe IC = 1 mA f = 4.5 MHz Input/Output Admittance vs. Collector to Emitter Voltage
gfe bre
200 100 50
20 gfe 10 0.1 bfe 1.0 2 0.2 0.5 Collector Current IC (mA) 5
20 10 1 10 20 50 2 5 Collector to Emitter Voltage VCE (V)
Input/Output Admittance vs. Collector Current VCE = 6 V f = 4.5 MHz 200 100 50 Percentage of Relative to VCE = 6 V (%) Percentage of Relative to IC = 1 mA (%) 500 goe gie bie boe 500
Transfer Admittance vs. Collector to Emitter Voltage IC = 1 mA f = 4.5 MHz 200 100 50 bre bfe gfe
boe bie gie goe
bre gfe bfe
20 10 0.1
20 10 1 2 5 10 20 50 Collector to Emitter Voltage VCE (V)
0.2 0.5 1.0 2 Collector Current IC (mA)
5
8
2SC460, 2SC461
Transfer Admittance vs. Collector Current Percentage of Relative to IC = 1 mA (%) Percentage of Relative to VCE = 6 V (%) 500 VCE = 6 V f = 4.5 MHz 200 100 50 bre bre bfe gfe 500 IC = 1 mA f = 10.7 MHz 200 100 50 goe gie boe gie bie bie goe boe Input/Output Admittance vs. Collector to Emitter Voltage
20 10 0.1
gfe bfe 0.2 0.5 1.0 2 Collector Current IC (mA) 5
20 10 1 10 20 50 2 5 Collector to Emitter Voltage VCE (V)
Input/Output Admittance vs. Collector Current Percentage of Relative to IC = 1 mA (%) Percentage of Relative to VCE = 6 V (%) 500 VCE = 6 V f = 10.7 MHz 200 100 gie goe 500
Transfer Admittance vs. Collector to Emitter Voltage IC = 1 mA f = 10.7 MHz 200 100 50 bre bfe gie
bie
bie
boe
50 boe gie 20 10 0.1 goe
bfe gie bre
20 10 1 10 20 50 2 5 Collector to Emitter Voltage VCE (V)
1.0 2 0.2 0.5 Collector Current IC (mA)
5
9
2SC460, 2SC461
Transfer Admittance vs. Collector Current Percentage of Relative to VCE = 6 V (%) VCE = 6 V f = 10.7 MHz bre bfe gfe bre 500 goe b oe gie IC = 1 mA f = 100 MHz Input/Output Admittance vs. Collector to Emitter Voltage
Percentage of Relative to IC = 1 mA (%)
500
200 100 50
200 100 50
bie
gie bie goe boe
20
gfe bfe
20 10 1 2 5 10 20 50 Collector to Emitter Voltage VCE (V)
10 0.1
0.2 0.5 1.0 2 Collector Current IC (mA)
5
Input/Output Admittance vs. Collector Current Percentage of Relative to IC = 1 mA (%) 500 VCE = 6 V f = 100 MHz 200 bie 100 50 boe bie gie 20 goe 1.0 2 0.2 0.5 Collector Current IC (mA) 5 goe gie Percentage of Relative to VCE = 6 V (%) 500
Transfer Admittance vs. Collector to Emitter Voltage IC = 1 mA f = 100 MHz 200 100 50 bre gfe bfe bfe gfe bre
boe
20 10 1 10 20 50 2 5 Collector to Emitter Voltage VCE (V)
10 0.1
10
2SC460, 2SC461
Transfer Admittance vs. Collector Current Percentage of Relative to IC = 1 mA (%) 500 VCE = 6 V f = 100 MHz bre bre bfe gfe
200 100 50 gfe 20
bfe 10 0.1 1.0 2 0.2 0.5 Collector Current IC (mA) 5
11
Unit: mm
4.8 0.3
3.8 0.3
2.3 Max 0.45 0.1 0.7 0.60 Max
12.7 Min
5.0 0.2
0.5
1.27 2.54
Hitachi Code JEDEC EIAJ Weight (reference value)
TO-92 (2) Conforms Conforms 0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

▲Up To Search▲

Price & Availability of 2SC461

	To Download 2SC461 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .